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This article is cited in 6 scientific papers (total in 6 papers)
Spectroscopy, interaction with radiation
Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals
E. A. Tolkachevaa, V. P. Markevichb, L. I. Murina a Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
b University of Manchester, Manchester, United Kingdom
Abstract:
The processes of the formation and annealing of V$_{n}$O$_{m} (n,m\ge2)$ vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm$^{-1}$ as being related to local vibrational modes of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ complexes, respectively.
Keywords:
Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data.
Received: 20.12.2017 Accepted: 09.01.2018
Citation:
E. A. Tolkacheva, V. P. Markevich, L. I. Murin, “Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 973–979; Semiconductors, 52:9 (2018), 1097–1103
Linking options:
https://www.mathnet.ru/eng/phts5725 https://www.mathnet.ru/eng/phts/v52/i9/p973
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