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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 10, Pages 1203–1206
DOI: https://doi.org/10.21883/FTP.2018.10.46462.8766
(Mi phts5716)
 

This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

On the growth of FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals and the study of their properties

I. V. Bondar'a, S. A. Detkova, Yu. V. Kasyukb, Yu. A. Fedotovab

a Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
b Research Institute for Nuclear Problems Belarusian State University, Minsk
Full-text PDF (161 kB) Citations (2)
Abstract: FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals are grown for the first time by the Bridgman method, and their composition and properties are determined. It is found that the single crystals are hexagonal in structure. The arrangement of Fe ions in the structure of the FeIn$_{2}$S$_{2}$Se$_{2}$ crystals is studied by nuclear $\gamma$-resonance spectroscopy. From the transmittance spectra in the region of the fundamental absorption edge, the band gap of the single crystals grown in the study is determined.
Keywords: Fundamental Absorption Edge, Vertical Bridgman Method, Feinsinger, Lorentzian Spectral Line, Relative Reflection Intensities.
Received: 15.11.2017
Accepted: 23.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 10, Pages 1323–1326
DOI: https://doi.org/10.1134/S1063782618100032
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', S. A. Detkov, Yu. V. Kasyuk, Yu. A. Fedotova, “On the growth of FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals and the study of their properties”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1203–1206; Semiconductors, 52:10 (2018), 1323–1326
Citation in format AMSBIB
\Bibitem{BonDetKas18}
\by I.~V.~Bondar', S.~A.~Detkov, Yu.~V.~Kasyuk, Yu.~A.~Fedotova
\paper On the growth of FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals and the study of their properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 10
\pages 1203--1206
\mathnet{http://mi.mathnet.ru/phts5716}
\crossref{https://doi.org/10.21883/FTP.2018.10.46462.8766}
\elib{https://elibrary.ru/item.asp?id=36903582}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 10
\pages 1323--1326
\crossref{https://doi.org/10.1134/S1063782618100032}
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  • https://www.mathnet.ru/eng/phts/v52/i10/p1203
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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