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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Luminescence spectra of high-power violet and ultraviolet gallium nitride-based LEDs
V. V. Volkova, L. M. Koganb, A. N. Turkina, A. I. Yunovicha a Faculty of Physics, Lomonosov Moscow State University
b Scientific-and-Production Center "Optel", Moscow, Russia
Abstract:
The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p – n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).
Keywords:
Violet LEDs, Electroluminescence Spectra, High-power LEDs, External Quantum Yield, Potential Fluctuations.
Received: 23.11.2017 Accepted: 11.12.2017
Citation:
V. V. Volkov, L. M. Kogan, A. N. Turkin, A. I. Yunovich, “Luminescence spectra of high-power violet and ultraviolet gallium nitride-based LEDs”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1172–1176; Semiconductors, 52:10 (2018), 1293–1297
Linking options:
https://www.mathnet.ru/eng/phts5710 https://www.mathnet.ru/eng/phts/v52/i10/p1172
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