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Spectroscopy, interaction with radiation
Luminescence and stimulated emission of polycrystalline Cu(In,Ga)Se$_{2}$ films deposited by magnetron-assisted sputtering
I. E. Svitsiankoua, V. N. Pavlovskiia, E. V. Lutsenkoa, G. P. Yablonskiia, V. Y. Shiripov, E. A. Khokhlov, A. V. Mudryib, V. D. Zhivulkob, O. M. Borodavchenkob, M. V. Yakushevc a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
c Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
The stimulated emission of Cu(In,Ga)Se$_{2}$ alloy thin films formed by magnetron-assisted sputtering onto a sodium-fluoride layer deposited onto a molybdenum layer on a glass substrate is observed. The structural and optical parameters of the films are determined by scanning electron microscopy, local X-ray spectral microanalysis, X-ray structural analysis, and low-temperature luminescence ($T$ = 10 K) measurements in the range of excitation levels of 1.6–75 kW cm$^{-2}$ provided by nanosecond nitrogen-laser pulses. The stimulated emission threshold corresponds to $\sim$25 kW cm$^{-2}$. Comparative analysis of the emission of Cu(In,Ga)Se$_{2}$ thin films suggests that the introduction of sodium results in significant improvement of the structural quality, specifically, in a decrease in the density of energy states in the band tails and in a decrease in the concentration of nonradiative-recombination centers.
Keywords:
Assisted Magnetron Sputtering, Stimulated Emission, Molybdenum Layer, Band Tail, Interband Radiative Recombination.
Received: 04.04.2018 Accepted: 16.04.2018
Citation:
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, V. Y. Shiripov, E. A. Khokhlov, A. V. Mudryi, V. D. Zhivulko, O. M. Borodavchenko, M. V. Yakushev, “Luminescence and stimulated emission of polycrystalline Cu(In,Ga)Se$_{2}$ films deposited by magnetron-assisted sputtering”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1120–1125; Semiconductors, 52:10 (2018), 1238–1243
Linking options:
https://www.mathnet.ru/eng/phts5704 https://www.mathnet.ru/eng/phts/v52/i10/p1120
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