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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1357–1361
DOI: https://doi.org/10.21883/FTP.2018.11.46598.20
(Mi phts5695)
 

This article is cited in 1 scientific paper (total in 1 paper)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Gapless Dirac electron mobility and quantum time in HgTe quantum wells

A. A. Dobretsovaab, Z. D. Kvonab, L. S. Braginskiiab, M. V. Èntinab, N. N. Mikhailovab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (480 kB) Citations (1)
Abstract: The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.
Keywords: HgTe Quantum Wells, Dirac Electron (DEs), Time Quantum, Thickness Fluctuations, Mesoscopic Samples.
Funding agency Grant number
Russian Foundation for Basic Research 17-52-14007
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1468–1472
DOI: https://doi.org/10.1134/S1063782618110076
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Dobretsova, Z. D. Kvon, L. S. Braginskii, M. V. Èntin, N. N. Mikhailov, “Gapless Dirac electron mobility and quantum time in HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1357–1361; Semiconductors, 52:11 (2018), 1468–1472
Citation in format AMSBIB
\Bibitem{DobKvoBra18}
\by A.~A.~Dobretsova, Z.~D.~Kvon, L.~S.~Braginskii, M.~V.~\`Entin, N.~N.~Mikhailov
\paper Gapless Dirac electron mobility and quantum time in HgTe quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1357--1361
\mathnet{http://mi.mathnet.ru/phts5695}
\crossref{https://doi.org/10.21883/FTP.2018.11.46598.20}
\elib{https://elibrary.ru/item.asp?id=36903613}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1468--1472
\crossref{https://doi.org/10.1134/S1063782618110076}
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  • https://www.mathnet.ru/eng/phts/v52/i11/p1357
  • This publication is cited in the following 1 articles:
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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