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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1535–1538
DOI: https://doi.org/10.21883/FTP.2018.12.46771.8855 (Mi phts5674) 		 
Manufacturing, processing, testing of materials and structures

Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation

A. S. Ilyina, A. N. Matsukatovaa, P. A. Forshabc, Yu. Vygranenkod

a Faculty of Physics, Lomonosov Moscow State University
b National Research Centre "Kurchatov Institute", Moscow
c Moscow Institute of Physics and Technology, Department of Nano-, Bio-, Information, and Cognitive Technologies, Dolgoprudnyi, Moscow region, Russia
d CTS-UNINOVA, Quinta da Torre, Caparica, Portugal
Full-text PDF (465 kB)
DOI: https://doi.org/10.21883/FTP.2018.12.46771.8855
Abstract: The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
Keywords: Indium Oxide Films, Photoconductivity Relaxation Time, Substrate Temperature, Photoelectric Properties, Photoconductivity Rise.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60060 мол_а_дк
Received: 28.02.2018
Accepted: 19.03.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1638–1641
DOI: https://doi.org/10.1134/S1063782618120114
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Ilyin, A. N. Matsukatova, P. A. Forsh, Yu. Vygranenko, “Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1535–1538; Semiconductors, 52:12 (2018), 1638–1641
Citation in format AMSBIB
\Bibitem{IlyMatFor18}
\by A.~S.~Ilyin, A.~N.~Matsukatova, P.~A.~Forsh, Yu.~Vygranenko
\paper Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1535--1538
\mathnet{http://mi.mathnet.ru/phts5674}
\crossref{https://doi.org/10.21883/FTP.2018.12.46771.8855}
\elib{https://elibrary.ru/item.asp?id=36903649}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1638--1641
\crossref{https://doi.org/10.1134/S1063782618120114}
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