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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1532–1534
DOI: https://doi.org/10.21883/FTP.2018.12.46770.8914 (Mi phts5673) 		 
Semiconductor physics

Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects

V. V. Kozlovskya, A. A. Lebedevbc, K. S. Davydovskajab, Yu. V. Lubimovad

a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (231 kB)
DOI: https://doi.org/10.21883/FTP.2018.12.46770.8914
Abstract: JBS diodes based on 4$H$-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.
Keywords: Radiation-induced Defects, Capacitance Voltage, Diode Base, Current Voltage Characteristics, Initial Doping Level.
Funding agency Grant number
Russian Science Foundation 16-12-10106
Received: 15.05.2018
Accepted: 21.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1635–1637
DOI: https://doi.org/10.1134/S1063782618120138
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Kozlovsky, A. A. Lebedev, K. S. Davydovskaja, Yu. V. Lubimova, “Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1532–1534; Semiconductors, 52:12 (2018), 1635–1637
Citation in format AMSBIB
\Bibitem{KozLebDav18}
\by V.~V.~Kozlovsky, A.~A.~Lebedev, K.~S.~Davydovskaja, Yu.~V.~Lubimova
\paper Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1532--1534
\mathnet{http://mi.mathnet.ru/phts5673}
\crossref{https://doi.org/10.21883/FTP.2018.12.46770.8914}
\elib{https://elibrary.ru/item.asp?id=36903648}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1635--1637
\crossref{https://doi.org/10.1134/S1063782618120138}
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