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This article is cited in 10 scientific papers (total in 10 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Bipolar persistent photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures
K. E. Spirina, D. M. Gaponovaa, K. V. Marem'yanina, V. V. Rumyantseva, V. I. Gavrilenkoa, N. N. Mikhailovb, S. A. Dvoretskiib a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at $T$ = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.
Keywords:
Persistent Photoconductivity (PPC), Residual Photoconductivity, Bipolar Character, High-energy Holes, Incident Radiation Wavelength.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
K. E. Spirin, D. M. Gaponova, K. V. Marem'yanin, V. V. Rumyantsev, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Bipolar persistent photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1482–1485; Semiconductors, 52:12 (2018), 1586–1589
Linking options:
https://www.mathnet.ru/eng/phts5664 https://www.mathnet.ru/eng/phts/v52/i12/p1482
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