Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates

The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 $\mu$m grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of -3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.