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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1447–1454
DOI: https://doi.org/10.21883/FTP.2018.12.46755.34 (Mi phts5658) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures

S. V. Gudinaa, Yu. G. Arapova, E. V. Ilchenkoa, V. N. Neverova, A. P. Savelyeva, S. M. Podgornykhab, N. G. Shelushininaa, M. V. Yakuninab, I. S. Vasil'evskiic, A. N. Vinichenkoc

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (481 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2018.12.46755.34
Abstract: The longitudinal $\rho_ {xx}$ and Hall $\rho_ {xy}$ resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of $T$ = 0.4–30 K in two-dimensional electron systems $n$-In$_{0.9}$Ga$_{0.1}$Аs/In$_{0.81}$Al$_{0.19}$As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance $\rho_{xx}$ peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.
Keywords: Quantum Hall Effect (QHE), Quantum Phase Transition, Landau Levels, QHE Regime, Opposite Spin Directions.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations АААА-А18-118020190098-5
Ural Branch of the Russian Academy of Sciences 18-10-2-6
Russian Foundation for Basic Research 18-02-00172
18-32-00382
18-02-00192
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1551–1558
DOI: https://doi.org/10.1134/S1063782618120102
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Gudina, Yu. G. Arapov, E. V. Ilchenko, V. N. Neverov, A. P. Savelyev, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1447–1454; Semiconductors, 52:12 (2018), 1551–1558
Citation in format AMSBIB
\Bibitem{GudAraIlc18}
\by S.~V.~Gudina, Yu.~G.~Arapov, E.~V.~Ilchenko, V.~N.~Neverov, A.~P.~Savelyev, S.~M.~Podgornykh, N.~G.~Shelushinina, M.~V.~Yakunin, I.~S.~Vasil'evskii, A.~N.~Vinichenko
\paper Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1447--1454
\mathnet{http://mi.mathnet.ru/phts5658}
\crossref{https://doi.org/10.21883/FTP.2018.12.46755.34}
\elib{https://elibrary.ru/item.asp?id=36903631}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1551--1558
\crossref{https://doi.org/10.1134/S1063782618120102}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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