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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1421–1424
DOI: https://doi.org/10.21883/FTP.2018.12.46750.29 (Mi phts5653) 		 
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy

A. P. Gorshkova, N. S. Volkovab, D. A. Pavlova, Yu. V. Usova, L. A. Istominb, S. B. Levichevb

a Lobachevsky State University of Nizhny Novgorod
b Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
Full-text PDF (392 kB)
DOI: https://doi.org/10.21883/FTP.2018.12.46750.29
Abstract: On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.
Keywords: Quantum Dots (QD), Diffusive Smearing, Emission Barrier Height, Metal Organic Vapor Phase Epitaxy (MOVPE), Exciton Dipole Moment.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 4.8337.2017/БЧ
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1525–1528
DOI: https://doi.org/10.1134/S1063782618120096
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Gorshkov, N. S. Volkova, D. A. Pavlov, Yu. V. Usov, L. A. Istomin, S. B. Levichev, “Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1421–1424; Semiconductors, 52:12 (2018), 1525–1528
Citation in format AMSBIB
\Bibitem{GorVolPav18}
\by A.~P.~Gorshkov, N.~S.~Volkova, D.~A.~Pavlov, Yu.~V.~Usov, L.~A.~Istomin, S.~B.~Levichev
\paper Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1421--1424
\mathnet{http://mi.mathnet.ru/phts5653}
\crossref{https://doi.org/10.21883/FTP.2018.12.46750.29}
\elib{https://elibrary.ru/item.asp?id=36903626}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1525--1528
\crossref{https://doi.org/10.1134/S1063782618120096}
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