Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13, Pages 1589–1596
DOI: https://doi.org/10.21883/FTP.2018.13.46872.8601
(Mi phts5634)
 

Surface, interfaces, thin films

Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films

K. V. Feklistova, A. G. Cherkovab, V. P. Popova, L. I. Fedinaa

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract: Using analytical high-resolution electron microscopy, the Si structure and the redistribution of Er and O recoil atoms embedded in thin ($\sim$10 nm) surface layers by Ar$^+$ implantation with an energy of 250–290 keV and a dose of 1 $\times$ 10$^{16}$ cm$^{-2}$ through Er and SiO$_2$ films, respectively, and subsequent annealing are studied. It is established that Si recrystallization fails at a distance of $\sim$20 nm from the surface, where the erbium concentration of 5 $\times$ 10$^{19}$ cm$^{-3}$ critical for failure is achieved at $T$ = 950$^{\circ}$C. It disproves the generally accepted model of Er-atom transfer by the recrystallization front into SiO$_2$ on the surface. Instead, it is shown that the redistribution of O recoil atoms to the initial oxide during annealing for immobile Er atoms provides the formation of surface-inhomogeneous erbium phases in such a way that the oxygen-enriched Er–Si–O phase turns out to be concentrated in the oxide, while the depleted Er–Si phase remains in Si. It explains the partial loss of implanted Er after removal of the oxide together with the Er–Si–O phase. It was shown that the formation of a high density of microtwins (locally up to 10$^{13}$ cm$^{-2}$) is associated with the formation of Ar bubbles and clusters, which is atypical for (100)–Si recrystallization.
Funding agency Grant number
8.1.5
Russian Science Foundation 14-22-00143
Received: 04.04.2017
Accepted: 02.04.2018
English version:
Semiconductors, 2018, Volume 52, Issue 13, Pages 1696–1703
DOI: https://doi.org/10.1134/S1063782618130055
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina, “Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1589–1596; Semiconductors, 52:13 (2018), 1696–1703
Citation in format AMSBIB
\Bibitem{FekChePop18}
\by K.~V.~Feklistov, A.~G.~Cherkov, V.~P.~Popov, L.~I.~Fedina
\paper Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 13
\pages 1589--1596
\mathnet{http://mi.mathnet.ru/phts5634}
\crossref{https://doi.org/10.21883/FTP.2018.13.46872.8601}
\elib{https://elibrary.ru/item.asp?id=36903659}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 13
\pages 1696--1703
\crossref{https://doi.org/10.1134/S1063782618130055}
Linking options:
  • https://www.mathnet.ru/eng/phts5634
  • https://www.mathnet.ru/eng/phts/v52/i13/p1589
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:36
    Full-text PDF :16
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024