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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13, Pages 1573–1577
DOI: https://doi.org/10.21883/FTP.2018.13.46868.8904 (Mi phts5630) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Conduction-electron spin resonance in HgSe crystals

A. I. Veingera, I. V. Kochmana, V. I. Okulovb, M. D. Andriichukc, L. D. Paranchichc

a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
c Chernivtsi National University
Full-text PDF (128 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.13.46868.8904
Abstract: Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00352
Russian Academy of Sciences - Federal Agency for Scientific Organizations 1.4
Received: 04.05.2018
Accepted: 21.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 13, Pages 1672–1676
DOI: https://doi.org/10.1134/S1063782618130225
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Veinger, I. V. Kochman, V. I. Okulov, M. D. Andriichuk, L. D. Paranchich, “Conduction-electron spin resonance in HgSe crystals”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1573–1577; Semiconductors, 52:13 (2018), 1672–1676
Citation in format AMSBIB
\Bibitem{VeiKocOku18}
\by A.~I.~Veinger, I.~V.~Kochman, V.~I.~Okulov, M.~D.~Andriichuk, L.~D.~Paranchich
\paper Conduction-electron spin resonance in HgSe crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 13
\pages 1573--1577
\mathnet{http://mi.mathnet.ru/phts5630}
\crossref{https://doi.org/10.21883/FTP.2018.13.46868.8904}
\elib{https://elibrary.ru/item.asp?id=36903655}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 13
\pages 1672--1676
\crossref{https://doi.org/10.1134/S1063782618130225}
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  • https://www.mathnet.ru/eng/phts/v52/i13/p1573
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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