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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method
D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov Saratov State University
Abstract:
The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.
Received: 16.04.2018 Accepted: 24.04.2018
Citation:
D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov, “Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1570–1572; Semiconductors, 52:13 (2018), 1669–1671
Linking options:
https://www.mathnet.ru/eng/phts5629 https://www.mathnet.ru/eng/phts/v52/i13/p1570
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Abstract page: | 49 | Full-text PDF : | 22 |
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