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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 1, Pages 132–136
(Mi phts5624)
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This article is cited in 2 scientific papers (total in 2 papers)
Manufacturing, processing, testing of materials and structures
Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method
V. G. Shchukin, R. G. Sharafutdinov, V. O. Konstantinov S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences
Abstract:
Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ($\alpha$-Si:H) with a conductivity up to 5.2 $\times$ 10$^{-3}$ ($\Omega$ cm)$^{-1}$ are fabricated; when doping with phosphorus, microcrystalline silicon films ($mc$-Si:H) with a crystallinity up to 70% and conductivity at a level of 1 ($\Omega$ cm)$^{-1}$ are fabricated.
Received: 22.05.2018 Revised: 25.06.2018
Citation:
V. G. Shchukin, R. G. Sharafutdinov, V. O. Konstantinov, “Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 132–136; Semiconductors, 53:1 (2019), 127–131
Linking options:
https://www.mathnet.ru/eng/phts5624 https://www.mathnet.ru/eng/phts/v53/i1/p132
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Abstract page: | 43 | Full-text PDF : | 9 |
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