Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method

Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ($\alpha$-Si:H) with a conductivity up to 5.2 $\times$ 10$^{-3}$ ($\Omega$ cm)$^{-1}$ are fabricated; when doping with phosphorus, microcrystalline silicon films ($mc$-Si:H) with a crystallinity up to 70% and conductivity at a level of 1 ($\Omega$ cm)$^{-1}$ are fabricated.