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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Effect of the electric mode and $\gamma$ irradiation on surface-defect formation at the Si–SiO$_2$ interface in a MOS transistor
N. A. Kulikov, V. D. Popov National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate $P$ = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the $n$-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
Received: 26.04.2018 Revised: 25.06.2018
Citation:
N. A. Kulikov, V. D. Popov, “Effect of the electric mode and $\gamma$ irradiation on surface-defect formation at the Si–SiO$_2$ interface in a MOS transistor”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 115–118; Semiconductors, 53:1 (2019), 110–113
Linking options:
https://www.mathnet.ru/eng/phts5622 https://www.mathnet.ru/eng/phts/v53/i1/p115
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