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Micro- and nanocrystalline, porous, composite semiconductors
Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
P. V. Seredina, D. L. Goloshchapova, D. S. Zolotukhina, A. S. Len'shina, A. N. Lukina, A. M. Mizerovb, E. V. Nikitinab, I. N. Arsent'evc, Harald Leisted, Monika Rinked a Voronezh State University
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c Ioffe Institute, St. Petersburg
d Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, Germany
Abstract:
Integrated heterostructures exhibiting a nanocolumnar morphology of the In$_{x}$Ga$_{1-x}$N film are grown on a single-crystal silicon substrate ($c$-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In$_{x}$Ga$_{1-x}$N nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the $c$-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In$_{x}$Ga$_{1-x}$N layer. The growth of In$_{x}$Ga$_{1-x}$N nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is $\sim$25% higher than the emission intensity for the film grown on the $c$-Si substrate.
Received: 12.04.2018 Revised: 21.05.2018
Citation:
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76; Semiconductors, 53:1 (2019), 65–71
Linking options:
https://www.mathnet.ru/eng/phts5614 https://www.mathnet.ru/eng/phts/v53/i1/p70
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