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This article is cited in 1 scientific paper (total in 1 paper)
Surface, interfaces, thin films
Nonresonance phase conjugation of light at the surface of GaN films upon high-power optical pumping
A. N. Gruzintsev, A. N. Redkin Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
Abstract:
The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
Received: 29.03.2018 Revised: 04.04.2018
Citation:
A. N. Gruzintsev, A. N. Redkin, “Nonresonance phase conjugation of light at the surface of GaN films upon high-power optical pumping”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 26–31; Semiconductors, 53:1 (2019), 22–27
Linking options:
https://www.mathnet.ru/eng/phts5606 https://www.mathnet.ru/eng/phts/v53/i1/p26
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Abstract page: | 39 | Full-text PDF : | 8 |
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