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This article is cited in 4 scientific papers (total in 4 papers)
Surface, interfaces, thin films
Effect of plasma-chemical surface modification on the electron transport and work function in silicon crystals
R. K. Yafarov Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Abstract:
The regularities governing the surface modification of silicon crystals during microwave-plasma microprocessing in different chemically active gaseous media are investigated. This modification is shown to be caused by the formation of built-in surface potentials, which, depending on the semiconductor electrical-conductivity type, differently affect the field-emission properties and surface electron transport in devices based on them.
Received: 22.01.2018 Revised: 21.02.2018
Citation:
R. K. Yafarov, “Effect of plasma-chemical surface modification on the electron transport and work function in silicon crystals”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 18–25; Semiconductors, 53:1 (2019), 14–21
Linking options:
https://www.mathnet.ru/eng/phts5605 https://www.mathnet.ru/eng/phts/v53/i1/p18
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Abstract page: | 46 | Full-text PDF : | 27 |
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