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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Influence of a quantum magnetic field on the heating of charge carriers in pure germanium
V. F. Bannayaa, E. V. Nikitinab a Moscow Pedagogical University, Moscow, Russian Federation, Moscow
b Peoples' Friendship University of Russia, Moscow
Abstract:
The results of an experimental study of charge-carrier heating by an electric field $\mathbf E$ in pure $n$- and $p$-type germanium samples in a quantizing magnetic field ($\mathbf H$), at $\mathbf E\perp\mathbf H$ and under carrier photoexcitation conditions, are considered in detail. The results obtained are in qualitative agreement with the predictions of the theory of charge-carrier capture in crossed electric and magnetic fields.
Received: 14.06.2018 Revised: 21.02.2018
Citation:
V. F. Bannaya, E. V. Nikitina, “Influence of a quantum magnetic field on the heating of charge carriers in pure germanium”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 13–17; Semiconductors, 53:1 (2019), 9–13
Linking options:
https://www.mathnet.ru/eng/phts5604 https://www.mathnet.ru/eng/phts/v53/i1/p13
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Abstract page: | 39 | Full-text PDF : | 19 |
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