|
This article is cited in 8 scientific papers (total in 8 papers)
Electronic properties of semiconductors
Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals
A. A. Gladilina, N. N. Il'icheva, V. P. Kalinushkina, M. I. Studenikina, O. V. Uvarova, V. A. Chapnina, V. V. Tumorina, G. G. Novikovb a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 $\mu$m and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.
Received: 15.01.2018 Revised: 19.01.2018
Citation:
A. A. Gladilin, N. N. Il'ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, V. V. Tumorin, G. G. Novikov, “Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 5–12; Semiconductors, 53:1 (2019), 1–8
Linking options:
https://www.mathnet.ru/eng/phts5603 https://www.mathnet.ru/eng/phts/v53/i1/p5
|
Statistics & downloads: |
Abstract page: | 44 | Full-text PDF : | 12 |
|