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This article is cited in 6 scientific papers (total in 6 papers)
Manufacturing, processing, testing of materials and structures
Oxide removal from the insb plate surface to produce lateral spin valves
N. A. Viglin, I. V. Gribov, V. M. Tsvelikhovskaya, E. I. Patrakov Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
sThe formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb plates as well as a variation in their roughness depending on the power supplied to ion etching devices are investigated. The degree of oxidation of the semiconductor surface exposed to air after ion cleaning and annealing in molecular hydrogen are evaluated. Based on comparison of the efficiency of spin injection in devices formed with semiconductors subjected to various types of treatment, a conclusion is made about the parameters of optimal preparation of the surface of the InSb wafers for the fabrication of lateral spin devices.
Received: 14.05.2018 Revised: 21.07.2018
Citation:
N. A. Viglin, I. V. Gribov, V. M. Tsvelikhovskaya, E. I. Patrakov, “Oxide removal from the insb plate surface to produce lateral spin valves”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 277–280; Semiconductors, 53:2 (2019), 264–267
Linking options:
https://www.mathnet.ru/eng/phts5601 https://www.mathnet.ru/eng/phts/v53/i2/p277
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Abstract page: | 34 | Full-text PDF : | 16 |
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