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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 249–252
DOI: https://doi.org/10.21883/FTP.2019.02.47108.8870 (Mi phts5596) 		 
Manufacturing, processing, testing of materials and structures

Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers

E. V. Erofeeva, I. V. Fedina, V. V. Fedinaa, A. P. Fazleevb

a Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia
b "Mikran" Research and Production Company, Tomsk
Full-text PDF (770 kB)
DOI: https://doi.org/10.21883/FTP.2019.02.47108.8870
Abstract: The formation features of a low-temperature Ta/Al-based ohmic contact to Al$_{0.25}$Ga$_{0.75}$N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 $\Omega$ mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at $T$ = 550$^{\circ}$C in a nitrogen atmosphere.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.577.21.0250
Received: 16.04.2018
Revised: 23.04.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 237–240
DOI: https://doi.org/10.1134/S1063782619020064
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 249–252; Semiconductors, 53:2 (2019), 237–240
Citation in format AMSBIB
\Bibitem{EroFedFed19}
\by E.~V.~Erofeev, I.~V.~Fedin, V.~V.~Fedina, A.~P.~Fazleev
\paper Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 249--252
\mathnet{http://mi.mathnet.ru/phts5596}
\crossref{https://doi.org/10.21883/FTP.2019.02.47108.8870}
\elib{https://elibrary.ru/item.asp?id=37476908}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 237--240
\crossref{https://doi.org/10.1134/S1063782619020064}
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