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Manufacturing, processing, testing of materials and structures
Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers
E. V. Erofeeva, I. V. Fedina, V. V. Fedinaa, A. P. Fazleevb a Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia
b "Mikran" Research and Production Company, Tomsk
Abstract:
The formation features of a low-temperature Ta/Al-based ohmic contact to Al$_{0.25}$Ga$_{0.75}$N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 $\Omega$ mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at $T$ = 550$^{\circ}$C in a nitrogen atmosphere.
Received: 16.04.2018 Revised: 23.04.2018
Citation:
E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 249–252; Semiconductors, 53:2 (2019), 237–240
Linking options:
https://www.mathnet.ru/eng/phts5596 https://www.mathnet.ru/eng/phts/v53/i2/p249
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Statistics & downloads: |
Abstract page: | 54 | Full-text PDF : | 27 |
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