Features of MIS structures with samarium fluoride on silicon and germanium substrates

The electrophysical characteristics of silicon and germanium MIS structures with an SmF$_3$ insulator film, as well as their degradation due to the effect of electric fields, although similar, have a number of specific features. The current-transmission mechanism in all studied structures is described by the power dependence. Interface traps form the charge of electrically active traps, which varies during capacitance–voltage measurements, and the charge of inactive traps, which remains invariable. This charge is negative on the $n$-Ge surface, and the corresponding charge on the n -type and p -type silicon surface is positive. The trap charge density in the bulk of samarium fluoride lies in the range from -0.2 $\times$ 10$^{-8}$ to 0.6 $\times$ 10$^{-8}$ C/cm$^2$ and is negligibly small when compared with the charge of interface traps in most cases.