Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 3, Pages 396–400
DOI: https://doi.org/10.21883/FTP.2019.03.47293.8913 (Mi phts5571) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor physics

EMF induced in a $p$–$n$ junction under a strong microwave field and light

G. Gulyamova, U. I. Erkaboevb, N. Yu. Sharibaevb, A. G. Gulyamovc

a Namangan Engineering – Building Institute
b Namangan Engineering and Technology Institute, Namangan
c Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
Full-text PDF (202 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2019.03.47293.8913
Abstract: The effect of a strong electromagnetic field on currents and electromotive forces in a $p$–$n$ junction is considered. It is shown that a $p$–$n$ junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a $p$–$n$ junction placed into a strong microwave (UHF) electromagnetic field.
Received: 15.05.2018
Revised: 01.10.2018
English version:
Semiconductors, 2019, Volume 53, Issue 3, Pages 375–378
DOI: https://doi.org/10.1134/S1063782619030060
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. Gulyamov, U. I. Erkaboev, N. Yu. Sharibaev, A. G. Gulyamov, “EMF induced in a $p$–$n$ junction under a strong microwave field and light”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 396–400; Semiconductors, 53:3 (2019), 375–378
Citation in format AMSBIB
\Bibitem{GulErkSha19}
\by G.~Gulyamov, U.~I.~Erkaboev, N.~Yu.~Sharibaev, A.~G.~Gulyamov
\paper EMF induced in a $p$--$n$ junction under a strong microwave field and light
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 3
\pages 396--400
\mathnet{http://mi.mathnet.ru/phts5571}
\crossref{https://doi.org/10.21883/FTP.2019.03.47293.8913}
\elib{https://elibrary.ru/item.asp?id=37477174}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 3
\pages 375--378
\crossref{https://doi.org/10.1134/S1063782619030060}
Linking options:
  • https://www.mathnet.ru/eng/phts5571
  • https://www.mathnet.ru/eng/phts/v53/i3/p396
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:52
    Full-text PDF :27
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024