Structure and properties of Zn-implanted Si near-surface layer modification depending on irradiation fluence of $^{132}$Xe$^{26+}$ ions with energy of 167 MeV

Single-crystal $n$-Si(100) wafers are implanted with $^{64}$Zn$^{+}$ ions with an energy of 50 keV and dose of 5 $\times$ 10$^{16}$ cm$^{-2}$. Then the samples are irradiated with $^{132}$Xe$^{26+}$ ions with an energy of 167 MeV in the range of fluences from 1 $\times$ 10$^{12}$ to 5 $\times$ 10$^{14}$ cm$^{-2}$. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 $\times$ 10$^{14}$ cm$^{-2}$, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.