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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 3, Pages 317–322
DOI: https://doi.org/10.21883/FTP.2019.03.47281.8980
(Mi phts5559)
 

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Specific features of the electron spin resonance of an iron impurity in HgSe crystals

A. I. Veingera, I. V. Kochmana, V. I. Okulovb, T. A. Govorkovab, M. D. Andriichukc, L. D. Paranchichc

a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
c Chernivtsi National University
Full-text PDF (143 kB) Citations (1)
Abstract: The electron-spin-resonance spectra of transition metal ions Fe in the HgSe matrix are analyzed. The spectra have an appearance typical of the Fe$^{3+}$ ion, i.e., they consist of five fine-structure lines with a splitting that corresponds to a weak crystal field. The spectra are observed at temperatures of up to 50 K. The spectral lines are deformed and have a Dyson shape. An analysis of the temperature dependences of the line amplitudes shows that a transition from paramagnetic ordering to ferromagnetic ordering occurs with decreasing temperature, with the Curie temperature $T\approx$ 7 K.
Received: 10.09.2018
Revised: 17.09.2018
English version:
Semiconductors, 2019, Volume 53, Issue 3, Pages 296–297
DOI: https://doi.org/10.1134/S1063782619030199
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Veinger, I. V. Kochman, V. I. Okulov, T. A. Govorkova, M. D. Andriichuk, L. D. Paranchich, “Specific features of the electron spin resonance of an iron impurity in HgSe crystals”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 317–322; Semiconductors, 53:3 (2019), 296–297
Citation in format AMSBIB
\Bibitem{VeiKocOku19}
\by A.~I.~Veinger, I.~V.~Kochman, V.~I.~Okulov, T.~A.~Govorkova, M.~D.~Andriichuk, L.~D.~Paranchich
\paper Specific features of the electron spin resonance of an iron impurity in HgSe crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 3
\pages 317--322
\mathnet{http://mi.mathnet.ru/phts5559}
\crossref{https://doi.org/10.21883/FTP.2019.03.47281.8980}
\elib{https://elibrary.ru/item.asp?id=37477037}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 3
\pages 296--297
\crossref{https://doi.org/10.1134/S1063782619030199}
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  • https://www.mathnet.ru/eng/phts/v53/i3/p317
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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