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This article is cited in 5 scientific papers (total in 5 papers)
Amorphous, glassy, organic semiconductors
Antisite defects in Ge–Te and Ge–As–Te semiconductor glasses
A. V. Marchenkoa, P. P. Seregina, E. I. Terukovb, K. B. Shakhovicha a Herzen State Pedagogical University of Russia, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Abstract:
The formation of antisite defects in Ge$_{20}$Te$_{80}$ and Ge$_{15}$As$_{4}$Te$_{81}$ vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the $^{119mm}$Sn($^{119m}$Sn), $^{119m}$Te($^{119m}$Sn), $^{125}$Sn($^{125}$Te), and $^{125m}$Te($^{125}$Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
Received: 27.11.2018 Revised: 03.12.2018 Accepted: 10.12.2018
Citation:
A. V. Marchenko, P. P. Seregin, E. I. Terukov, K. B. Shakhovich, “Antisite defects in Ge–Te and Ge–As–Te semiconductor glasses”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 718–723; Semiconductors, 53:5 (2019), 711–716
Linking options:
https://www.mathnet.ru/eng/phts5526 https://www.mathnet.ru/eng/phts/v53/i5/p718
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