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This article is cited in 10 scientific papers (total in 10 papers)
Electronic properties of semiconductors
On estimates of the electron affinity of silicon-carbide polytypes and the band offsets in heterojunctions based on these polytypes
S. Yu. Davydov Ioffe Institute, St. Petersburg
Abstract:
Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.
Received: 08.10.2018 Revised: 10.12.2018 Accepted: 17.12.2018
Citation:
S. Yu. Davydov, “On estimates of the electron affinity of silicon-carbide polytypes and the band offsets in heterojunctions based on these polytypes”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 706–709; Semiconductors, 53:5 (2019), 699–702
Linking options:
https://www.mathnet.ru/eng/phts5524 https://www.mathnet.ru/eng/phts/v53/i5/p706
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Abstract page: | 61 | Full-text PDF : | 10 |
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