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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5, Pages 640–644
DOI: https://doi.org/10.21883/FTP.2019.05.47554.12
(Mi phts5510)
 

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Variation in the state of $^{119m}$Sn impurity atoms in PbTe during the establishment of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sb isotopes

P. P. Seregina, A. V. Marchenkoa, F. S. Nasredinovb, A. B. Zharkoia

a Herzen State Pedagogical University of Russia, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
Abstract: The parameters of the emission Mössbauer spectra of PbTe using the $^{119m}$Sn daughter isotope with different parent nuclei $^{119mm}$Sn, $^{119m}$Sb, and $^{119m}$Te are compared. This comparison makes it possible to identify impurity tin atoms in both lead-telluride sublattices. It is found that the ratio of tin concentrations in different sublattices depends on the time after source preparation.
Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018
English version:
Semiconductors, 2019, Volume 53, Issue 5, Pages 633–637
DOI: https://doi.org/10.1134/S1063782619050233
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. P. Seregin, A. V. Marchenko, F. S. Nasredinov, A. B. Zharkoi, “Variation in the state of $^{119m}$Sn impurity atoms in PbTe during the establishment of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sb isotopes”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 640–644; Semiconductors, 53:5 (2019), 633–637
Citation in format AMSBIB
\Bibitem{SerMarNas19}
\by P.~P.~Seregin, A.~V.~Marchenko, F.~S.~Nasredinov, A.~B.~Zharkoi
\paper Variation in the state of $^{119m}$Sn impurity atoms in PbTe during the establishment of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sb isotopes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 5
\pages 640--644
\mathnet{http://mi.mathnet.ru/phts5510}
\crossref{https://doi.org/10.21883/FTP.2019.05.47554.12}
\elib{https://elibrary.ru/item.asp?id=37644648}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 5
\pages 633--637
\crossref{https://doi.org/10.1134/S1063782619050233}
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