|
This article is cited in 2 scientific papers (total in 2 papers)
XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018
Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides
D. S. Pankratovaa, A. P. Novitskiia, K. V. Kuskova, I. A. Serhiienkoa, D. V. Leyboa, A. Burkovb, P. P. Konstantinovb, V. V. Khovayloa a National University of Science and Technology «MISIS», Moscow
b Ioffe Institute, St. Petersburg
Abstract:
The transport properties of $p$-type oxyselenides with the chemical composition Bi$_{1-x}$La$_{x}$CuSeO ($x$ = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La$^{3+}$ for Bi$^{3+}$ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
Received: 20.12.2018 Revised: 24.12.2018 Accepted: 28.12.2018
Citation:
D. S. Pankratova, A. P. Novitskii, K. V. Kuskov, I. A. Serhiienko, D. V. Leybo, A. Burkov, P. P. Konstantinov, V. V. Khovaylo, “Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 631–634; Semiconductors, 53:5 (2019), 624–627
Linking options:
https://www.mathnet.ru/eng/phts5508 https://www.mathnet.ru/eng/phts/v53/i5/p631
|
Statistics & downloads: |
Abstract page: | 48 | Full-text PDF : | 11 |
|