Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5, Pages 631–634
DOI: https://doi.org/10.21883/FTP.2019.05.47552.10
(Mi phts5508)
 

This article is cited in 2 scientific papers (total in 2 papers)

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides

D. S. Pankratovaa, A. P. Novitskiia, K. V. Kuskova, I. A. Serhiienkoa, D. V. Leyboa, A. Burkovb, P. P. Konstantinovb, V. V. Khovayloa

a National University of Science and Technology «MISIS», Moscow
b Ioffe Institute, St. Petersburg
Full-text PDF (361 kB) Citations (2)
Abstract: The transport properties of $p$-type oxyselenides with the chemical composition Bi$_{1-x}$La$_{x}$CuSeO ($x$ = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La$^{3+}$ for Bi$^{3+}$ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018
English version:
Semiconductors, 2019, Volume 53, Issue 5, Pages 624–627
DOI: https://doi.org/10.1134/S1063782619050221
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Pankratova, A. P. Novitskii, K. V. Kuskov, I. A. Serhiienko, D. V. Leybo, A. Burkov, P. P. Konstantinov, V. V. Khovaylo, “Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 631–634; Semiconductors, 53:5 (2019), 624–627
Citation in format AMSBIB
\Bibitem{PanNovKus19}
\by D.~S.~Pankratova, A.~P.~Novitskii, K.~V.~Kuskov, I.~A.~Serhiienko, D.~V.~Leybo, A.~Burkov, P.~P.~Konstantinov, V.~V.~Khovaylo
\paper Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 5
\pages 631--634
\mathnet{http://mi.mathnet.ru/phts5508}
\crossref{https://doi.org/10.21883/FTP.2019.05.47552.10}
\elib{https://elibrary.ru/item.asp?id=37644646}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 5
\pages 624--627
\crossref{https://doi.org/10.1134/S1063782619050221}
Linking options:
  • https://www.mathnet.ru/eng/phts5508
  • https://www.mathnet.ru/eng/phts/v53/i5/p631
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:48
    Full-text PDF :11
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024