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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Simulation approach to modeling of the avalanche breakdown of a $p$–$n$ junction
A. S. Shashkinaa, S. D. Khaninb a St. Petersburg State Institute of Cinema and Television
b S. M. Budyonny Military Academy of Communications, St. Petersburg, Russia
Abstract:
The avalanche breakdown of a $p$–$n$ junction is investigated experimentally in order to study the temporal distribution of microplasma pulses. It is revealed that the observed type of microplasma noise is not described by the existing model of processes occurring during the avalanche breakdown of a $p$–$n$ junction. A computer model explaining the mechanisms of microplasma instability and taking into account the electric and temperature dependences of avalanche breakdown, which agrees with the experimental results, is developed using simulation modeling.
Received: 29.10.2018 Revised: 25.01.2019 Accepted: 30.01.2019
Citation:
A. S. Shashkina, S. D. Khanin, “Simulation approach to modeling of the avalanche breakdown of a $p$–$n$ junction”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 850–855; Semiconductors, 53:6 (2019), 838–843
Linking options:
https://www.mathnet.ru/eng/phts5495 https://www.mathnet.ru/eng/phts/v53/i6/p850
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Abstract page: | 41 | Full-text PDF : | 25 |
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