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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 6, Pages 805–809
DOI: https://doi.org/10.21883/FTP.2019.06.47733.9043 (Mi phts5487) 		 
Surface, interfaces, thin films

Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation

S. V. Sitnikova, E. E. Rodyakinaab, A. V. Latyshevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (546 kB)
DOI: https://doi.org/10.21883/FTP.2019.06.47733.9043
Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120$^{\circ}$C.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60199 мол_а_дк
Received: 10.12.2018
Revised: 09.01.2019
Accepted: 23.01.2019
English version:
Semiconductors, 2019, Volume 53, Issue 6, Pages 795–799
DOI: https://doi.org/10.1134/S106378261906023X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev, “Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 805–809; Semiconductors, 53:6 (2019), 795–799
Citation in format AMSBIB
\Bibitem{SitRodLat19}
\by S.~V.~Sitnikov, E.~E.~Rodyakina, A.~V.~Latyshev
\paper Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 6
\pages 805--809
\mathnet{http://mi.mathnet.ru/phts5487}
\crossref{https://doi.org/10.21883/FTP.2019.06.47733.9043}
\elib{https://elibrary.ru/item.asp?id=39133294}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 6
\pages 795--799
\crossref{https://doi.org/10.1134/S106378261906023X}
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