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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 6, Pages 784–788
DOI: https://doi.org/10.21883/FTP.2019.06.47729.38 (Mi phts5483) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Structure and thermoelectric properties of CoSi-based film composites

V. S. Kuznetsovaa, S. V. Novikova, C. K. Nichenametlab, J. Calvob, M. Wagner-Reetzb

a Ioffe Institute, St. Petersburg
b Fraunhofer Institute for Photonic Microsystems – Center of Nanoelectronic Technologies, Dresden, Germany
Full-text PDF (188 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2019.06.47729.38
Abstract: Properties of Co–Si thin films produced by thermal treatment of Co and Si layers are studied in this article. Co/Si layers were produced by chemical vapor deposition. The two-layer structure was annealed at elevated temperatures for the formation of cobalt silicide. Thermoelectric properties of the film structures were investigated in the temperature range 300–800 K. Temperature dependences of thermopower and resistivity as well as structural data indicate the formation a multilayer structure with Si-rich and Co-rich layers.
Received: 07.02.2019
Revised: 10.02.2019
Accepted: 14.02.2019
English version:
Semiconductors, 2019, Volume 53, Issue 6, Pages 775–779
DOI: https://doi.org/10.1134/S1063782619060101
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. S. Kuznetsova, S. V. Novikov, C. K. Nichenametla, J. Calvo, M. Wagner-Reetz, “Structure and thermoelectric properties of CoSi-based film composites”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 784–788; Semiconductors, 53:6 (2019), 775–779
Citation in format AMSBIB
\Bibitem{KuzNovNic19}
\by V.~S.~Kuznetsova, S.~V.~Novikov, C.~K.~Nichenametla, J.~Calvo, M.~Wagner-Reetz
\paper Structure and thermoelectric properties of CoSi-based film composites
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 6
\pages 784--788
\mathnet{http://mi.mathnet.ru/phts5483}
\crossref{https://doi.org/10.21883/FTP.2019.06.47729.38}
\elib{https://elibrary.ru/item.asp?id=39133290}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 6
\pages 775--779
\crossref{https://doi.org/10.1134/S1063782619060101}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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