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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 6, Pages 774–776
DOI: https://doi.org/10.21883/FTP.2019.06.47726.35
(Mi phts5480)
 

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Correlation of the optical and magnetic properties of Bi$_{2}$Te$_{3}$–Sb$_{2}$Te$_{3}$ crystals

N. P. Stepanova, A. K. Gilfanovb, E. N. Trubitsynab

a Zabaikalsky State University, Chita
b Zabaikalsky Institute of Entrepreneurship, Chita, Russia
Abstract: During the study of Bi$_{2}$Te$_{3}$–Sb$_{2}$Te$_{3}$ crystals, their magnetic and optical properties were studied depending on the ratios of the components of Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$ in the composition of the solid solution and temperature. The results obtained allow us to state that a sharp decrease in the anisotropy of magnetic susceptibility at $T$ = 293 K is observed in those samples in which, according to optical studies, electron-plasmon interaction is intensified, which is caused by the convergence of plasmon energies and interband transitions that form the fundamental absorption edge.
Received: 07.02.2019
Revised: 10.02.2019
Accepted: 14.02.2019
English version:
Semiconductors, 2019, Volume 53, Issue 6, Pages 765–767
DOI: https://doi.org/10.1134/S1063782619060265
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. P. Stepanov, A. K. Gilfanov, E. N. Trubitsyna, “Correlation of the optical and magnetic properties of Bi$_{2}$Te$_{3}$–Sb$_{2}$Te$_{3}$ crystals”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 774–776; Semiconductors, 53:6 (2019), 765–767
Citation in format AMSBIB
\Bibitem{SteGilTru19}
\by N.~P.~Stepanov, A.~K.~Gilfanov, E.~N.~Trubitsyna
\paper Correlation of the optical and magnetic properties of Bi$_{2}$Te$_{3}$--Sb$_{2}$Te$_{3}$ crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 6
\pages 774--776
\mathnet{http://mi.mathnet.ru/phts5480}
\crossref{https://doi.org/10.21883/FTP.2019.06.47726.35}
\elib{https://elibrary.ru/item.asp?id=39133287}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 6
\pages 765--767
\crossref{https://doi.org/10.1134/S1063782619060265}
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