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This article is cited in 1 scientific paper (total in 1 paper)
Surface, interfaces, thin films
On the properties of isoparametric AlInGaAsP/InP heterostructures
D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. S. Pashchenko, È. M. Danilina Federal Research Center, Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
Abstract:
The paper discusses the influence of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures. The main parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium phosphide substrates from the liquid phase in the temperature gradiend field are determined.
Received: 17.12.2018 Revised: 25.01.2019 Accepted: 30.01.2019
Citation:
D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. S. Pashchenko, È. M. Danilina, “On the properties of isoparametric AlInGaAsP/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 903–907; Semiconductors, 53:7 (2019), 887–891
Linking options:
https://www.mathnet.ru/eng/phts5453 https://www.mathnet.ru/eng/phts/v53/i7/p903
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