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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 7, Pages 883–886
DOI: https://doi.org/10.21883/FTP.2019.07.47861.41
(Mi phts5449)
 

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Thermoelectric intensifier of heat transfer between two moving media with different temperatures

J. K. Kadirova

Daghestan State Technical University, Makhachkala, Russia
Abstract: A patented thermoelectric intensifier of heat transfer between two moving media with different temperatures is investigated. Its design envisages the use of fan units in order to increase the heat-transfer intensity between media. A mathematical model of the device is developed based on solution of the heat balance equation for media flows in transport zones under conditions of forward flow. The calculated data are presented in the form of a dependence of the temperature change of moving media along the intensifier for different values of the heat-transfer coefficient between the thermoelectric cell junctions and the air medium in the device gap. It is established that, the larger the temperature difference between the inlet media, the sharper the dependence of the thermopile limit on the heat-transfer coefficient.
Received: 06.03.2019
Revised: 11.03.2019
Accepted: 11.03.2019
English version:
Semiconductors, 2019, Volume 53, Issue 7, Pages 869–871
DOI: https://doi.org/10.1134/S106378261907011X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: J. K. Kadirova, “Thermoelectric intensifier of heat transfer between two moving media with different temperatures”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 883–886; Semiconductors, 53:7 (2019), 869–871
Citation in format AMSBIB
\Bibitem{Kad19}
\by J.~K.~Kadirova
\paper Thermoelectric intensifier of heat transfer between two moving media with different temperatures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 7
\pages 883--886
\mathnet{http://mi.mathnet.ru/phts5449}
\crossref{https://doi.org/10.21883/FTP.2019.07.47861.41}
\elib{https://elibrary.ru/item.asp?id=39133309}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 7
\pages 869--871
\crossref{https://doi.org/10.1134/S106378261907011X}
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