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Manufacturing, processing, testing of materials and structures
Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
P. V. Seredinab, D. L. Goloshchapova, D. S. Zolotukhina, A. S. Len'shina, A. M. Mizerovc, I. N. Arsent'evd, Harald Leistee, Monika Rinkee a Voronezh State University
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Ioffe Institute, St. Petersburg
e Karlsruhe Nano Micro Facility H.-von-Helmholtz-Platz 1,
76344 Eggenstein-Leopoldshafen, Germany
Abstract:
The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an AIN/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.
Keywords:
gallium nitride, nanocolumns, molecular beam epitaxy, porous silicon, structural properties.
Received: 12.02.2019 Revised: 01.04.2019 Accepted: 01.04.2019
Citation:
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1141–1151; Semiconductors, 53:8 (2019), 1120–1130
Linking options:
https://www.mathnet.ru/eng/phts5443 https://www.mathnet.ru/eng/phts/v53/i8/p1141
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Abstract page: | 47 | Full-text PDF : | 31 |
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