|
This article is cited in 1 scientific paper (total in 1 paper)
Micro- and nanocrystalline, porous, composite semiconductors
Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures
M. L. Luninaa, L. S. Luninab, D. L. Alfimovaa, A. S. Pashchenkoa, È. M. Danilinaa, V. V. Nefedovb a Federal Research Center Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
b Platov South-Russian State Polytechnic University (SRSTU (NPI)), Novocherkassk, Russia
Abstract:
The results of growing elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$ thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures is investigated.
Keywords:
heterostructures, temperature gradient, liquid-zone thickness, lattice period, thermal-expansion coefficient, diffraction reflection curve, elastic stresses, dislocations, external quantum yield.
Received: 12.02.2019 Revised: 07.03.2019 Accepted: 11.03.2019
Citation:
M. L. Lunina, L. S. Lunin, D. L. Alfimova, A. S. Pashchenko, È. M. Danilina, V. V. Nefedov, “Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1110–1114; Semiconductors, 53:8 (2019), 1088–1091
Linking options:
https://www.mathnet.ru/eng/phts5437 https://www.mathnet.ru/eng/phts/v53/i8/p1110
|
Statistics & downloads: |
Abstract page: | 28 | Full-text PDF : | 5 |
|