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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1103–1109
DOI: https://doi.org/10.21883/FTP.2019.08.48002.9037
(Mi phts5436)
 

Micro- and nanocrystalline, porous, composite semiconductors

On the synthesis and photoluminescence and cathodoluminescence properties of CdSe, CdTe, PbS, InSb, and GaAs colloidal quantum dots

N. D. Zhukova, D. V. Krylskyb, M. I. Shishkinc, A. A. Khazanova

a OOO NPP Volga, Saratov
b Research Institute of Applied Acoustics, Dubna
c Saratov State University
Abstract: Quantum dots of the group of wide-gap and narrow-gap semiconductors are synthesized and investigated under identical conditions, which makes it possible to perform the comparative analysis and modeling of the mechanisms of radiative recombination and luminescence, for which a stable exciton bond between the electron and hole has an important role. Exciton states are unstable for quantum dots without a shell and narrow-gap semiconductors, which leads to a substantial decrease in the probability of radiative recombination and, correspondingly, the quantum yield of luminescence. The experimental values of the spectral position of the luminescence maximum for quantum dots with clear manifestation of the exciton recombination mechanism noticeably shift to the long-wavelength region with respect to the calculated ones. In calculations and analysis, we use the effective electron mass for bulk semiconductors. The observed good correspondence of the calculated values of the maximum and spectral band with the experiment can mean that quantum dots have a long-range order crystalline structure similar to that one observed in single crystals and polycrystals.
Keywords: colloidal quantum dots, photoluminescence, cathodoluminescence.
Funding agency Grant number
Russian Foundation for Basic Research 17-07-00407-а
18-07-00586-а
This study was supported by the Russian Foundation for Basic Research, project nos. 17-07-00407-a and 18-07-00586-a.
Received: 05.12.2018
Revised: 18.12.2018
Accepted: 18.12.2018
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1082–1087
DOI: https://doi.org/10.1134/S1063782619080232
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Zhukov, D. V. Krylsky, M. I. Shishkin, A. A. Khazanov, “On the synthesis and photoluminescence and cathodoluminescence properties of CdSe, CdTe, PbS, InSb, and GaAs colloidal quantum dots”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1103–1109; Semiconductors, 53:8 (2019), 1082–1087
Citation in format AMSBIB
\Bibitem{ZhuKryShi19}
\by N.~D.~Zhukov, D.~V.~Krylsky, M.~I.~Shishkin, A.~A.~Khazanov
\paper On the synthesis and photoluminescence and cathodoluminescence properties of CdSe, CdTe, PbS, InSb, and GaAs colloidal quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1103--1109
\mathnet{http://mi.mathnet.ru/phts5436}
\crossref{https://doi.org/10.21883/FTP.2019.08.48002.9037}
\elib{https://elibrary.ru/item.asp?id=41129839}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1082--1087
\crossref{https://doi.org/10.1134/S1063782619080232}
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