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Semiconductor structures, low-dimensional systems, quantum phenomena
Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment
B. V. Sladkopevtseva, G. I. Kotovb, I. N. Arsent'evc, I. S. Shashkinb, I. Ya. Mittovaa, E. V. Tominaa, A. A. Samsonova, P. V. Kostenkoa a Voronezh State University
b Voronezh State University of Engineering Technologies
c Ioffe Institute, St. Petersburg
Abstract:
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V$_{2}$O$_{5}$ and MnO$_2$ nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I – V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V$_{2}$O$_{5}$ facilitates the more intense (in comparison with MnO$_2$) chemical bonding of arsenic at the internal interface with the formation of As$_2$O$_5$. As a result, thermally oxidized V$_{2}$O$_{5}$/GaAs heterostructures exhibit higher breakdown voltages.
Keywords:
gallium arsenide, thin films, heat treatment, vanadium oxide, manganese oxide.
Received: 01.04.2019 Revised: 09.04.2019 Accepted: 09.04.2019
Citation:
B. V. Sladkopevtsev, G. I. Kotov, I. N. Arsent'ev, I. S. Shashkin, I. Ya. Mittova, E. V. Tomina, A. A. Samsonov, P. V. Kostenko, “Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1074–1079; Semiconductors, 53:8 (2019), 1054–1059
Linking options:
https://www.mathnet.ru/eng/phts5432 https://www.mathnet.ru/eng/phts/v53/i8/p1074
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