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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures
Yu. N. Khanina, E. E. Vdovina, A. Mishchenkob, K. S. Novoselovb a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
b School of Physics and Astronomy, University of Manchester,
Oxford Road, Manchester, M13 9PL, UK
Abstract:
Tunneling and magnetic tunneling are investigated in graphene/$h$-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the $h$-BN barrier, and current caused by their presence is generated.
Keywords:
tunneling, magnetic tunneling, van der Waals heterosystems, graphene.
Received: 06.03.2019 Revised: 10.03.2019 Accepted: 13.03.2019
Citation:
Yu. N. Khanin, E. E. Vdovin, A. Mishchenko, K. S. Novoselov, “Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1058–1062; Semiconductors, 53:8 (2019), 1038–1041
Linking options:
https://www.mathnet.ru/eng/phts5429 https://www.mathnet.ru/eng/phts/v53/i8/p1058
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