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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1037–1042
DOI: https://doi.org/10.21883/FTP.2019.08.47991.8978
(Mi phts5425)
 

Electronic properties of semiconductors

Spin–orbit interaction and carrier mobility in a longitudinal insb autosoliton under a magnetic field

I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
Abstract: A version of the spin–orbit interaction of orbitally moving and spin-oriented electrons in a longitudinal autosoliton in indium antimonide under a longitudinal magnetic field is proposed and considered. The additional energy gained by spin–orbit electrons due to this interaction is determined. Expressions for the change in the mobility during the orbital motion of electrons under a magnetic field and the additive mobility of spin-oriented electrons are derived and calculated. The coefficients of the mutual influence of changing electron mobility in the case of orbital motion and the additive mobility of spin-oriented electrons are calculated.
Keywords: autosoliton, electron, spin, diamagnetism, magneton.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation AAAA-A17-1170213 10366-5
Received: 30.08.2018
Revised: 13.03.2019
Accepted: 27.03.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1018–1023
DOI: https://doi.org/10.1134/S1063782619080098
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov, “Spin–orbit interaction and carrier mobility in a longitudinal insb autosoliton under a magnetic field”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1037–1042; Semiconductors, 53:8 (2019), 1018–1023
Citation in format AMSBIB
\Bibitem{KamSteGum19}
\by I.~K.~Kamilov, A.~A.~Stepurenko, A.~E.~Gummetov
\paper Spin--orbit interaction and carrier mobility in a longitudinal insb autosoliton under a magnetic field
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1037--1042
\mathnet{http://mi.mathnet.ru/phts5425}
\crossref{https://doi.org/10.21883/FTP.2019.08.47991.8978}
\elib{https://elibrary.ru/item.asp?id=41129826}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1018--1023
\crossref{https://doi.org/10.1134/S1063782619080098}
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