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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1285–1288
DOI: https://doi.org/10.21883/FTP.2019.09.48140.24 (Mi phts5418) 		 
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation

R. Kh. Zhukavina, S. G. Pavlovb, A. Pohlc, N. V. Abrosimovd, H. Riemannd, B. Redliche, H.-W. Hübersbc, V. N. Shastina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b DLR Institute of Optical Sensor Systems, Berlin, Germany
c Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany
d Leibniz-Institut für Kristallzüchtung, Berlin, Germany
e ED Radboud University Nijmegen, Institute for Molecules and Materials, FELIX Laboratory, Nijmegen, The Netherlands
Full-text PDF (207 kB)
DOI: https://doi.org/10.21883/FTP.2019.09.48140.24
Abstract: The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.
Keywords: silicon, bismuth, uniaxial pressure, intracenter optical excitation, emission-frequency tuning.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00979
18-502-12077-ÍÍÈÎ
Deutsche Forschungsgemeinschaft 389056032
This study was supported by the Russian Foundation for Basic Research, project no. 19-02-00979, and the Joint Russian–German Project, DFG no. 389056032 and RFBR no. 18-502-12077-DFG.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1255–1257
DOI: https://doi.org/10.1134/S1063782619090288
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1285–1288; Semiconductors, 53:9 (2019), 1255–1257
Citation in format AMSBIB
\Bibitem{ZhuPavPoh19}
\by R.~Kh.~Zhukavin, S.~G.~Pavlov, A.~Pohl, N.~V.~Abrosimov, H.~Riemann, B.~Redlich, H.-W.~H\"ubers, V.~N.~Shastin
\paper Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1285--1288
\mathnet{http://mi.mathnet.ru/phts5418}
\crossref{https://doi.org/10.21883/FTP.2019.09.48140.24}
\elib{https://elibrary.ru/item.asp?id=41129883}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1255--1257
\crossref{https://doi.org/10.1134/S1063782619090288}
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