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This article is cited in 1 scientific paper (total in 1 paper)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition
V. G. Shengurov, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov, N. A. Alyabina, A. V. Zaitsev Lobachevsky State University of Nizhny Novgorod
Abstract:
$n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH$_4$ at a low substrate temperature ($\sim$325$^{\circ}$C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the $n ^+$-Ge layers with a donor impurity (P) to a concentration of $>$ 1 $\times$ 10$^{19}$ cm$^{-3}$ is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.
Keywords:
tunnel diode, Ge/Si structures, hot-wire chemical vapor deposition.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
V. G. Shengurov, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov, N. A. Alyabina, A. V. Zaitsev, “Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1267–1270; Semiconductors, 53:9 (2019), 1238–1241
Linking options:
https://www.mathnet.ru/eng/phts5414 https://www.mathnet.ru/eng/phts/v53/i9/p1267
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