Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1233–1236
DOI: https://doi.org/10.21883/FTP.2019.09.48130.13 (Mi phts5408) 		 
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures

S. M. Plankinaa, O. V. Vikhrovab, B. N. Zvonkovb, S. Yu. Zubkova, R. N. Kriukova, A. V. Nezhdanova, D. A. Pavlova, I. Yu. Pashen'kinc, A. A. Sushkova

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (337 kB)
DOI: https://doi.org/10.21883/FTP.2019.09.48130.13
Abstract: The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.
Keywords: metal–organic vapor phase epitaxy, heterostructures, metamorphous layer, Raman scattering, photoluminescence.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.1751.2017/Ï×
Russian Foundation for Basic Research 18-29-19137_ìê
The study was supported by the Ministry of Education and Science of the Russian Federation, project part of government order no. 8.1751.2017/PCh, and the Russian Foundation for Basic Research, project no. 18-29-19137_mk.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1207–1210
DOI: https://doi.org/10.1134/S1063782619090148
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov, R. N. Kriukov, A. V. Nezhdanov, D. A. Pavlov, I. Yu. Pashen'kin, A. A. Sushkov, “On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236; Semiconductors, 53:9 (2019), 1207–1210
Citation in format AMSBIB
\Bibitem{PlaVikZvo19}
\by S.~M.~Plankina, O.~V.~Vikhrova, B.~N.~Zvonkov, S.~Yu.~Zubkov, R.~N.~Kriukov, A.~V.~Nezhdanov, D.~A.~Pavlov, I.~Yu.~Pashen'kin, A.~A.~Sushkov
\paper On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1233--1236
\mathnet{http://mi.mathnet.ru/phts5408}
\crossref{https://doi.org/10.21883/FTP.2019.09.48130.13}
\elib{https://elibrary.ru/item.asp?id=41129869}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1207--1210
\crossref{https://doi.org/10.1134/S1063782619090148}
Linking options:
  • https://www.mathnet.ru/eng/phts5408
  • https://www.mathnet.ru/eng/phts/v53/i9/p1233
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:53
    Full-text PDF :15
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024