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XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Hyperfine interaction and Shockley–Read–Hall recombination in semiconductors
E. L. Ivchenkoa, V. K. Kalevicha, A. Kunoldb, A. Balocchic, X. Mariec, T. Amandc a Ioffe Institute, St. Petersburg
b Universidad Autónoma Metropolitana Azcapotzalco,
02200 Mexico City, Mexico
c Université de Toulouse, INSA-CNRS-UPS,
31077 Toulouse, France
Abstract:
Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs$_{1-x}$N$_{x}$ solid solutions, in which Ga$^{2+}$ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.
Keywords:
optical orientation, recombination, deep centers, hyperfine interaction, spin beats.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
E. L. Ivchenko, V. K. Kalevich, A. Kunold, A. Balocchi, X. Marie, T. Amand, “Hyperfine interaction and Shockley–Read–Hall recombination in semiconductors”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1200–1206; Semiconductors, 53:9 (2019), 1175–1181
Linking options:
https://www.mathnet.ru/eng/phts5402 https://www.mathnet.ru/eng/phts/v53/i9/p1200
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Abstract page: | 50 | Full-text PDF : | 43 |
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