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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1189–1194
DOI: https://doi.org/10.21883/FTP.2019.09.48122.05
(Mi phts5400)
 

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Lateral energy transfer by plasmons excited by a terahertz wave in a periodic spatially asymmetric graphene structure

D. V. Fateevab, K. V. Mashinskya, I. M. Moiseenkoa, V. V. Popova

a Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
b Saratov State University
Abstract: The power conversion of a terahertz wave normally incident on a periodic graphene structure to propagating-plasmon power is theoretically studied. The conditions of the maximum conversion of the incident radiation power to the propagating-plasmon power and excitation condition of unidirectional traveling plasmon are determined. It is found that up to 15% of the incident wave power can be converted to propagating-plasmon power.
Keywords: plasmon, terahertz radiation, graphene, traveling wave.
Funding agency Grant number
Russian Science Foundation 18-79-10041
This study was supported by the Russian Science Foundation, project no. 18-79-10041.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1164–1169
DOI: https://doi.org/10.1134/S1063782619090057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Fateev, K. V. Mashinsky, I. M. Moiseenko, V. V. Popov, “Lateral energy transfer by plasmons excited by a terahertz wave in a periodic spatially asymmetric graphene structure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1189–1194; Semiconductors, 53:9 (2019), 1164–1169
Citation in format AMSBIB
\Bibitem{FatMasMoi19}
\by D.~V.~Fateev, K.~V.~Mashinsky, I.~M.~Moiseenko, V.~V.~Popov
\paper Lateral energy transfer by plasmons excited by a terahertz wave in a periodic spatially asymmetric graphene structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1189--1194
\mathnet{http://mi.mathnet.ru/phts5400}
\crossref{https://doi.org/10.21883/FTP.2019.09.48122.05}
\elib{https://elibrary.ru/item.asp?id=41129859}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1164--1169
\crossref{https://doi.org/10.1134/S1063782619090057}
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