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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Microwave magnetic absorption in HgSe with Co and Ni impurities
A. I. Veingera, I. V. Kochmana, D. A. Frolova, V. I. Okulovb, T. E. Govorkovab, L. D. Paranchichc a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
c Chernivtsi National University
Abstract:
Features of magnetic-field-dependent microwave absorption in HgSe samples doped with Co and Ni impurities in different concentrations are investigated. The electron-spin resonance spectra of weakly coupled Co atoms and peculiarities of the magnetic-absorption variation in a magnetic field passing through the zero value are established. The main parameters of the electron-spin resonance spectra and temperature and angular dependences of microwave absorption in weak fields are determined.
Keywords:
electron-spin resonance, HgSe, microwave absorption, spontaneous magnetization.
Received: 29.04.2019 Revised: 13.05.2019 Accepted: 13.05.2019
Citation:
A. I. Veinger, I. V. Kochman, D. A. Frolov, V. I. Okulov, T. E. Govorkova, L. D. Paranchich, “Microwave magnetic absorption in HgSe with Co and Ni impurities”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1413–1418; Semiconductors, 53:10 (2019), 1375–1380
Linking options:
https://www.mathnet.ru/eng/phts5388 https://www.mathnet.ru/eng/phts/v53/i10/p1413
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