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XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors
T. A. Shobolovaa, A. V. Korotkova, E. V. Petryakovaa, A. V. Lipatnikova, A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovb a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
Approaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which could be used as active elements of modern Si-based and GaAs-based radiation-resistant analog-digital integrated circuits, are discussed. Comparison of the radiation resistance of prospective “lateral” Si-based bipolar and “vertical” AlGaAs/GaAs heterobipolar transistors with a characteristic base thickness of 70–350 nm is performed. The features of the electron transport in active transistor regions are analyzed in detail and the influence of a surge in the velocity and the diffusion of quasi-ballistic electrons on an increase in the radiation resistance of transistors is evaluated.
Keywords:
bipolar and heterobipolar transistors, silicon-on-sapphire, electron transport, simulation, radiation resistance.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
T. A. Shobolova, A. V. Korotkov, E. V. Petryakova, A. V. Lipatnikov, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1391–1394; Semiconductors, 53:10 (2019), 1353–1356
Linking options:
https://www.mathnet.ru/eng/phts5384 https://www.mathnet.ru/eng/phts/v53/i10/p1391
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